Monolithic Microwave Integrated Circuit (MMIC) Design

Course 181

Summary:

The successful design of monolithic microwave integrated circuits (MMICs) is the fruit of a disciplined design approach. This three-day course covers, in detail, the theory, and practical strategies required to achieve first-pass design success. Specifically, the course covers the monolithic implementation of microwave circuits on GaAs substrates including instruction on processing, masks, simulation, layout, design rule checking, packaging, and testing. Numerous design examples are provided with emphasis on increasing yield, and reliability.

Learning Objectives:

Upon completing the course, the participant will be able to:

• Learn the advantages and limitations of MMIC Designs
• Take advantage of the inherent benefits of MMICs over hybrid circuits.
• Account for the parasitics of the active device.
• Design biasing networks for active circuits.
• Design gain amplifiers MMICs using lumped and distributed matching.
• Design power amplifiers MMICs.
• Improve the yield of MMIC chips.
• Calculate the lifetime of MMIC chips in packaged and unpackaged assemblies.

Target Audience:

Microwave engineers who want to design, fabricate, and test robust RF/Wireless MMICs, in the 1-50 GHz frequency range, will benefit from this comprehensive design course. Basic knowledge of microwave measurements and transmission line (Smith Chart) theory is assumed.

Outline:

Day One

Introduction to MMIC Design
• Advantages and tradeoffs: cost, performance, reliability, size. • Applications: Satellite communications, wireless LANs, microwave links, cellular networks. • Choosing among device technologies: GaAs FET, GaAs HBT, etc. • MMIC Design cycle : process selection, device characterization, circuit topology decision, design, taping-out, testing.
Passive MMIC Elements
• Lumped element modeling : resistors, capacitors, inductors, via holes. • Transmission line modeling : microstrip, coplanar. • Combiners and dividers : Wilkinson, Lange. • Baluns, coupled lines, transformers, couplers. • Design example: 50-to-5 ohm matching network.
Two-port network basics
• S-, Y-, Z-, and H-parameters. • Gain definitions : Gmax, MSG, Unilateral gain. • Conjugate matching. • Stability analysis : odd mode, even mode analysis.

Day Two

Active Devices
• De-embedding, Characterization, modeling. • GaAs MESFET, HEMT, HBT. • Emerging technologies : Si CMOS, SiGe BiCMOS, GaN/SiC. • Device parameters : ft, fmax, gm, RON, COFF, parasitics. • Equivalent circuit—physical basis. • Intrinsic equivalent circuit. • Illustrative example: equivalent circuit extraction. • Thermal resistance and lifetime estimation. • Design example: choosing FET gate-pitch and bias for 10+ years lifetime.
Buffer Amplifiers
• Biasing network selection. • Single stage design: lumped vs. distributed matching. • Design example: 30 GHz power amplifier. • Multi-stage design. • Feedback amplifiers. • Design example: 5 GHz, 1/2 – Watt power amplifier.

Day Three

Layout steps
• Microstrip layout rules. • Coplanar layout rules. • Process control and monitoring. • Design rules and component values limitations. • Reverse engineering. • Yield and sensitivity analysis. • Layout example: layout of 17 GHz, 1 Watt, power amplifier.
Testing and Packaging
• Rapid testing: on-wafer, dc-screening. • Package design. • Package parasitics: cavity effects, stabilization. • Thermal management: epoxy, eutectic.

Subject Areas Covered

RF/MW Integrated Circuit (RFIC/MMIC) Design
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